GaN Power Transistor by Efficient Power Conversion (66 more products)

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EPC7007 Image

The EPC7007 from Efficient Power Conversion is a Radiation Hardened GaN Power Transistor that is specifically designed for critical applications in the high reliability or commercial satellite space environments. This transistor has a drain-source voltage of over 200 V, a gate-threshold voltage of 1.4 V and a drain-source resistance of up to 17 mΩ. It has a continuous drain current of less than 20 A and a pulsed drain current of up to 80 A. This GaN transistor offers both exceptionally high electron mobility and has a low temperature coefficient that result in very low drain-source resistance values. It consists of a lateral structure that provides a very low gate charge of 5.4 nC in conjunction with extremely fast switching times.

This power transistor is available as a passivated die that measures 3.6 x 1.6 mm and is ideal for space applications: DC-DC power, motor drives, lidar, ion thrusters, commercial satellite EPS & avionics, deep space probes, high frequency radiation hard DC-DC conversion and radiation hard motor drive applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Efficient Power Conversion
  • Description
    200 V Radiation Hardened GaN Power Transistor


  • Configuration
  • Industry
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    17 to 25 milli-ohm
  • Continous Drain Current
    20 A
  • Pulsed Drain Current
    80 A
  • Total Charge
    5.4 nC
  • Input Capacitance
    525 pF
  • Output Capacitance
    256 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
  • Package Type
  • Applications
    DC-DC power, motor drives, lidar, ion thrusters, Commercial satellite EPS & avionics, Deep space probes, High frequency rad hard DC-DC conversion, Rad hard motor drives
  • Dimensions
    3.6 mm x 1.6 mm

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