The EPC7007 from Efficient Power Conversion is a Radiation Hardened GaN Power Transistor that is specifically designed for critical applications in the high reliability or commercial satellite space environments. This transistor has a drain-source voltage of over 200 V, a gate-threshold voltage of 1.4 V and a drain-source resistance of up to 17 mΩ. It has a continuous drain current of less than 20 A and a pulsed drain current of up to 80 A. This GaN transistor offers both exceptionally high electron mobility and has a low temperature coefficient that result in very low drain-source resistance values. It consists of a lateral structure that provides a very low gate charge of 5.4 nC in conjunction with extremely fast switching times.
This power transistor is available as a passivated die that measures 3.6 x 1.6 mm and is ideal for space applications: DC-DC power, motor drives, lidar, ion thrusters, commercial satellite EPS & avionics, deep space probes, high frequency radiation hard DC-DC conversion and radiation hard motor drive applications.