GaN Power Transistor by Efficient Power Conversion (85 more products)

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EPC7014 Image

The EPC7014 from Efficient Power Conversion is a Radiation-Hard GaN Power Transistor that has been specifically designed for critical applications in high-reliability or commercial satellite space environments. It has a drain-source breakdown voltage of over 60 V, a gate threshold voltage of 1.6 V, and a drain-source on-resistance of 240 milli-ohms. This transistor has a continuous drain current of up to 2.4 A and a pulsed drain current of less than 4 A. It offers superior reliability in a space environment as there are no minority carriers for a single event and less displacement for protons and neutrons as it incorporates a wideband semiconductor. This GaN transistor provides exceptionally high electron mobility and low-temperature coefficient, resulting in very low drain-source on-resistance values. It is available in a passivated die that measures 0.9 x 0.9 mm and is ideal for rad-hard motor drives, high-frequency rad-hard DC-DC conversions, commercial satellite EPS, avionics, and deep space probe applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Efficient Power Conversion
  • Description
    60 V Radiation-Hard GaN Power Transistor


  • Configuration
  • Industry
  • Gate Threshold Voltage
    1.6 V
  • Drain Source Voltage
    60 V
  • Drain Source Resistance
    240 milli-ohm
  • Continous Drain Current
    2.4 A
  • Pulsed Drain Current
    4 A
  • Total Charge
    142 to 184 nC
  • Input Capacitance
    16 to 22 pF
  • Output Capacitance
    17 to 26 pF
  • Temperature operating range
    -55 to 125 Degree C
  • RoHS Compliant
  • Package Type
  • Package
  • Applications
    Satellite EPS & avionics, Deep space probes, High frequency Rad Hard DC-DC conversion, Rad Hard motor drives
  • Dimensions
    0.9 x 0.9 mm

Technical Documents