GaN Power Transistor by Efficient Power Conversion (69 more products)

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EPC7018 Image

The EPC7018 from Efficient Power Conversion is a Radiation Hard eGaN Power Transistor. It has a drain-to-source voltage of over 100 V, a gate-to-source voltage of up to 6 V, and a drain-source on-resistance of 2.7 mΩ. This GaN power transistor has a continuous drain current of up to 90 A and a pulsed drain current of less than 345 A. It has exceptionally high electron mobility and low-temperature coefficient that results in a very low drain-source on-resistance. This transistor consists of a lateral structure that provides a very low gate charge and offers an extremely fast switching time. It is available as a passivated die that measures 6.05 x 2.3 mm and is ideal for deep space probes, high-frequency radiation-hard DC-DC converters, radiation hard motor drives, space applications: DC-DC power, motor drives, lidar, ion thrusters, commercial satellite EPS, and avionics applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V Rad-Hard eGaN Power Transistor for Space Applications


  • Configuration
  • Industry
    Commercial, Industrial, Space
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    2.7 milli-ohm
  • Continous Drain Current
    90 A
  • Pulsed Drain Current
    345 A
  • Total Charge
    15.2 nC
  • Input Capacitance
    1828 pF
  • Output Capacitance
    1025 pF
  • Temperature operating range
    -55 to 150 degree C
  • RoHS Compliant
  • Package Type
  • Applications
    DC-DC power, motor drives, lidar, ion thrusters, Commercial satellite EPS & avionics, Deep space probes, High frequency Rad Hard DC-DC conversion, Rad Hard motor drives
  • Dimensions
    6.05 mm x 2.3 mm

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