The EPC7007BSH from EPC Space is a Radiation Hard GaN Power Transistor that has been specifically designed for critical applications in high reliability or commercial satellite space environments. This transistor has a drain-to-source voltage of over 200 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of less than 28 mΩ. It has a continuous drain current of up to 20 A and a pulsed drain current of less than 80 A. This power transistor provides exceptionally high electron mobility and low-temperature coefficient that results in very low drain-source on-resistance values. It has a lateral structure that provides a very low gate charge along with an extremely fast switching time.
The EPC7007BSH is available in a surface-mount package that measures 5.461 x 3.683 mm and is ideal for satellite, avionics, rad-hard motor controllers, high-speed rad-hard DC-DC conversion, and deep space probe applications.