EPC7007BSH

GaN Power Transistor by EPC Space (10 more products)

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The EPC7007BSH from EPC Space is a Radiation Hard GaN Power Transistor that has been specifically designed for critical applications in high reliability or commercial satellite space environments. This transistor has a drain-to-source voltage of over 200 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of less than 28 mΩ. It has a continuous drain current of up to 20 A and a pulsed drain current of less than 80 A. This power transistor provides exceptionally high electron mobility and low-temperature coefficient that results in very low drain-source on-resistance values. It has a lateral structure that provides a very low gate charge along with an extremely fast switching time.

The EPC7007BSH is available in a surface-mount package that measures 5.461 x 3.683 mm and is ideal for satellite, avionics, rad-hard motor controllers, high-speed rad-hard DC-DC conversion, and deep space probe applications.

Product Specifications

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Product Details

  • Part Number
    EPC7007BSH
  • Manufacturer
    EPC Space
  • Description
    Radiation Hard GaN Power Transistor for Avionics & Deep Space Applications

General

  • Configuration
    Single
  • Industry
    Space
  • Gate Threshold Voltage
    1.2 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    28 milli-ohm
  • Continous Drain Current
    20 A
  • Pulsed Drain Current
    80 A
  • Total Charge
    5.4 nC
  • Input Capacitance
    525 pF
  • Output Capacitance
    256 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Applications
    Satellite and Avionics, Deep Space Probes, High Speed Rad Hard DC-DC Conversion, Rad Hard Motor Controllers, Nuclear Facilities
  • Dimensions
    5.461 x 3.683 mm

Technical Documents