EPC7018GSH

GaN Power Transistor by EPC Space (10 more products)

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The EPC7018G from EPC Space is a Rad-Hard GaN Power Transistor that has been specifically designed for critical applications in high reliability or commercial satellite space environments. It has a drain-to-source voltage of over 100 V, a gate threshold voltage of 1.2 V, and a drain-source resistance of 5.2 mΩ. This GaN transistor has a continuous drain current of up to 95 A and a pulsed drain current of less than 345 A. It has exceptionally high electron mobility and low-temperature coefficient that results in a very low drain-source on-resistance.

The EPC7018G consists of a lateral structure that provides a very low gate charge and offers an extremely fast switching time. This transistor is available in a die that measures 8 x 5.6 x 1.6 mm and is ideal for satellite and avionics, deep space probes, high-speed rad-hard DC-DC conversion, nuclear facilities, and rad-hard motor controller applications.

Product Specifications

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Product Details

  • Part Number
    EPC7018GSH
  • Manufacturer
    EPC Space
  • Description
    100 V Radiation-Hardened GaN Power Transistor for Satellite Applications

General

  • Configuration
    Single
  • Industry
    Space
  • Gate Threshold Voltage
    1.2 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    5.2 milli-ohm
  • Continous Drain Current
    95 A
  • Pulsed Drain Current
    345 A
  • Total Charge
    11.7 nC
  • Input Capacitance
    1240 pF
  • Output Capacitance
    740 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Die
  • Applications
    Satellite and Avionics, Deep Space Probes, High Speed Rad Hard DC-DC Conversion, Rad Hard Motor Controllers, Nuclear Facilities
  • Dimensions
    8 x 5.6 x 1.6 mm

Technical Documents