EPC7020GSH

GaN Power Transistor by EPC Space (16 more products)

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The EPC7020GSH from EPC Space is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 200 V, Drain Source Resistance 9.5 to 14.5 milli-ohm, Continous Drain Current 80 A, Pulsed Drain Current 200 A. Tags: Surface Mount. More details for EPC7020GSH can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC7020GSH
  • Manufacturer
    EPC Space
  • Description
    200 V, 9.5 to 14.5 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    9.5 to 14.5 milli-ohm
  • Continous Drain Current
    80 A
  • Pulsed Drain Current
    200 A
  • Total Charge
    13.5 nC
  • Input Capacitance
    1313 pF
  • Output Capacitance
    640 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    FSMD-G
  • Applications
    Satellite and Avionics, Deep Space Probes, High Speed Rad Hard DC-DC Conversion, Rad-Hard Motor Controllers, Nuclear Facilities
  • Dimensions
    8 x 5.6 mm

Technical Documents