FBG04N08A

GaN Power Transistor by EPC Space (8 more products)

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The FBG04N08A from EPC Space is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 40 V, Drain Source Resistance 24 to 28 milli-ohm, Continous Drain Current 8 A, Pulsed Drain Current 32 A. Tags: Surface Mount. More details for FBG04N08A can be seen below.

Product Specifications

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Product Details

  • Part Number
    FBG04N08A
  • Manufacturer
    EPC Space
  • Description
    40 V, 8 A, GaN Power Transistor

General

  • Configuration
    Single
  • Industry
    Space
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    24 to 28 milli-ohm
  • Continous Drain Current
    8 A
  • Pulsed Drain Current
    32 A
  • Total Charge
    2.2 to 2.8 nC
  • Input Capacitance
    283 to 312 pF
  • Output Capacitance
    170 to 270 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Applications
    Satellite and Avionics, Deep Space Probes, High Speed Rad Hard DC-DC Conversion, Rad Hard Motor Controllers
  • Dimensions
    3.4 x 3.4 mm

Technical Documents

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