FBG04N30B

GaN Power Transistor by EPC Space (16 more products)

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FBG04N30B Image

The FBG04N30B from EPC Space is a Radiation Hard eGaN Power Switching HEMT that is ideal for satellite and avionics, deep space probes, high-speed radiation-hard DC-DC conversion, and radiation-hard motor controller applications. This GaN HEMT has a drain-source breakdown voltage of up to 40 V, a gate threshold voltage of 1 V, and a drain-source on-resistance of less than 10 milli-ohms. It has a continuous drain current of up to 30 A and a pulsed drain current of less than 120 A. This GaN transistor has been specifically designed for critical applications in high-reliability or commercial satellite space environments. It offers exceptionally high electron mobility and a low-temperature coefficient, resulting in very low drain-source on-resistance values.

This RoHS-compliant transistor has a lateral die structure that provides a very low gate charge and very fast switching times. It has a faster power supply switching frequency that results in high power density, higher efficiency, and more compact packaging. The RoHS-compliant eGaN HEMT is available as a die that measures 5.7 x 3.9 mm.

Product Specifications

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Product Details

  • Part Number
    FBG04N30B
  • Manufacturer
    EPC Space
  • Description
    40 V Radiation Hard eGaN Power Switching HEMT

General

  • Configuration
    Single
  • Industry
    Space
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    5 to 8.5 milli-ohm
  • Continous Drain Current
    30 A
  • Pulsed Drain Current
    120 A
  • Total Charge
    8.9 to 11.4 nC
  • Input Capacitance
    1100 to 1300 pF
  • Output Capacitance
    650 to 900 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Applications
    Satellite and Avionics, Deep Space Probes, High Speed Rad Hard DC-DC Conversion, Rad Hard Motor Controllers
  • Dimensions
    5.7 x 3.9 mm

Technical Documents