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GS-065-018-2-L-MR

GaN Power Transistor by GaN Systems (26 more products)
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The GS-065-018-2-L-MR from GaN Systems is a GaN Power Transistor with Gate Threshold Voltage 1.1 o 2.6 V, Drain Source Voltage 650 V, Drain Source Resistance 78 to 197 milli-ohm, Continous Drain Current 18 A, Pulsed Drain Current 35 A. Tags: Surface Mount. More details for GS-065-018-2-L-MR can be seen below.

Product Specifications

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Product Details

  • Part Number
    GS-065-018-2-L-MR
  • Manufacturer
    GaN Systems
  • Description
    650 V, 78 to 197 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.1 o 2.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    78 to 197 milli-ohm
  • Continous Drain Current
    18 A
  • Pulsed Drain Current
    35 A
  • Total Charge
    4 nC
  • Input Capacitance
    132 pF
  • Output Capacitance
    34 pF
  • Turn-on Delay Time
    1.5 ns
  • Turn-off Delay Time
    2.9 ns
  • Rise Time
    5 ns
  • Fall Time
    4.8 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN
  • Applications
    Consumer and Industrial Power Supplies, Power Adapters, LED Lighting Drivers, Fast Battery Charging, Power Factor Correction, Appliance and Industrial Motor Drives, Wireless Power Transfer
  • Dimensions
    8 x 8 x 0.9 mm

Technical Documents
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