GS-065-030-2-L-MR

GaN Power Transistor by GaN Systems (26 more products)

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The GS-065-030-2-L-MR from GaN Systems is a GaN Power Transistor with Gate Threshold Voltage 1.1 o 2.6 V, Drain Source Voltage 650 V, Drain Source Resistance 50 to 127 milli-ohm, Continous Drain Current 30 A, Pulsed Drain Current 60 A. Tags: Surface Mount. More details for GS-065-030-2-L-MR can be seen below.

Product Specifications

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Product Details

  • Part Number
    GS-065-030-2-L-MR
  • Manufacturer
    GaN Systems
  • Description
    650 V, 50 to 127 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.1 o 2.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    50 to 127 milli-ohm
  • Continous Drain Current
    30 A
  • Pulsed Drain Current
    60 A
  • Total Charge
    6.7 nC
  • Input Capacitance
    235 pF
  • Output Capacitance
    60 pF
  • Turn-on Delay Time
    8.2 ns
  • Turn-off Delay Time
    10.8 ns
  • Rise Time
    6.3 ns
  • Fall Time
    5.7 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN
  • Applications
    Bridgeless Totem Pole PFC, Consumer, Industrial and Datacenter High Density Power Supply, High Power Adapters, LED Lighting Drivers, Appliance and Industrial Motor Drives, Solar Inverter, Uninterruptable Power Supplies, Laser Drivers, Wireless Power Trans
  • Dimensions
    8 x 8 x 0.9 mm

Technical Documents