GS61004B Image


GaN Transistor by GaN Systems

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The GS61004B from GaN Systems is a GaN Transistor with Gate Threshold Voltage 1.7 V, Drain Source Voltage 100 V, Drain Source Resistance 16 milli-ohm, Continous Drain Current 38 A, Pulsed Drain Current 60 A. Tags: Die. More details for GS61004B can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    GaN Systems
  • Description
    100 V GaN-on-Si Enhancement Transistor


  • Configuration
  • Gate Threshold Voltage
    1.7 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    16 milli-ohm
  • Continous Drain Current
    38 A
  • Pulsed Drain Current
    60 A
  • Total Charge
    3.3 nC
  • Input Capacitance
    260 pF
  • Output Capacitance
    110 pF
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
  • Package Type
  • Package
  • Applications
    Enterprise and networking power, UPS, industrial motor drives, solar power, fast battery charging, class D audio amplifiers, smart home, and wireless power transfer
  • Dimensions
    4.6 x 4.4 x 0.51 mm

Technical Documents

Latest GaN Transistors

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