GS66506T

GaN Power Transistor by GaN Systems (26 more products)

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The GS66506T from GaN Systems is a GaN Power Transistor with Gate Threshold Voltage 1.1 to 2.6 V, Drain Source Voltage 650 V, Drain Source Resistance 67 to 175 milli-ohm, Continous Drain Current 18 to 22.5 A, Pulsed Drain Current 48 A. Tags: Die. More details for GS66506T can be seen below.

Product Specifications

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Product Details

  • Part Number
    GS66506T
  • Manufacturer
    GaN Systems
  • Description
    650 V Enhancement Mode GaN Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    1.1 to 2.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    67 to 175 milli-ohm
  • Continous Drain Current
    18 to 22.5 A
  • Pulsed Drain Current
    48 A
  • Total Charge
    4.5 nC
  • Input Capacitance
    185 pF
  • Output Capacitance
    49 pF
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    GaNPX
  • Applications
    AC-DC Converters, DC-DC Converters, Uninterruptible Power Supplies, Industrial Motor Drives, Appliance Motor Drives, Fast Battery Charging, Class D Audio amplifiers, Power Adapters, Wireless Power Transfer
  • Dimensions
    5.6 x 4.5 x 0.54 mm

Technical Documents