GS66516T

GaN Power Transistor by GaN Systems (26 more products)

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The GS66516T from GaN Systems is a GaN Power Transistor with Gate Threshold Voltage 1.1 to 2.6 V, Drain Source Voltage 650 V, Drain Source Resistance 25 to 65 milli-ohm, Continous Drain Current 47 to 60 A, Pulsed Drain Current 120 A. Tags: Die. More details for GS66516T can be seen below.

Product Specifications

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Product Details

  • Part Number
    GS66516T
  • Manufacturer
    GaN Systems
  • Description
    650 V Enhancement Mode GaN Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    1.1 to 2.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    25 to 65 milli-ohm
  • Continous Drain Current
    47 to 60 A
  • Pulsed Drain Current
    120 A
  • Total Charge
    14.2 nC
  • Input Capacitance
    518 pF
  • Output Capacitance
    126 pF
  • Turn-on Delay Time
    4.6 ns
  • Turn-off Delay Time
    14.9 ns
  • Rise Time
    12.4 ns
  • Fall Time
    22 ns
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    GaNPX
  • Applications
    AC-DC Converters, DC-DC Converters, Uninterruptible Power Supplies, Industrial Motor Drives, Appliance Motor Drives, Fast Battery Charging, Class D Audio amplifiers, Power Adapters, Wireless Power Transfer
  • Dimensions
    9.0 x 7.6 x 0.54 mm

Technical Documents