GPI65030TO5L

GaN Power Transistor by GaNPower International (21 more products)

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The GPI65030TO5L from GaNPower International is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 2.9 V, Drain Source Voltage 650 V, Drain Source Resistance 29 to 70 milli-ohm, Continous Drain Current 30 A, Total Charge 5.8 nC. Tags: Surface Mount. More details for GPI65030TO5L can be seen below.

Product Specifications

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Product Details

  • Part Number
    GPI65030TO5L
  • Manufacturer
    GaNPower International
  • Description
    650 V, 29 to 70 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 2.9 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    29 to 70 milli-ohm
  • Continous Drain Current
    30 A
  • Total Charge
    5.8 nC
  • Input Capacitance
    241 pF
  • Output Capacitance
    61 pF
  • Turn-on Delay Time
    6 ns
  • Turn-off Delay Time
    15 ns
  • Rise Time
    12 ns
  • Fall Time
    13 ns
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO263-5L
  • Applications
    Switching Power Applications, Adapters, Quick Chargers

Technical Documents