GPI65060DFN

GaN Power Transistor by GaNPower International (21 more products)

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The GPI65060DFN from GaNPower International is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 2.9 V, Drain Source Voltage 650 V, Drain Source Resistance 25 to 30 milli-ohm, Continous Drain Current 60 A, Total Charge 16.1 nC. Tags: Surface Mount. More details for GPI65060DFN can be seen below.

Product Specifications

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Product Details

  • Part Number
    GPI65060DFN
  • Manufacturer
    GaNPower International
  • Description
    650 V, 25 to 30 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 2.9 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    25 to 30 milli-ohm
  • Continous Drain Current
    60 A
  • Total Charge
    16.1 nC
  • Input Capacitance
    420 pF
  • Output Capacitance
    143 pF
  • Turn-on Delay Time
    9 ns
  • Turn-off Delay Time
    26 ns
  • Rise Time
    17 ns
  • Fall Time
    17 ns
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    Switching Power Applications, Server and Telecom Power Applications, EVOBC and DC-DC Converters
  • Dimensions
    8 x 8 mm

Technical Documents