IGI60L5050A1M

GaN Power Transistor by Infineon Technologies (22 more products)

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The IGI60L5050A1M from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 1.6 V, Drain Source Voltage 600 V, Drain Source Resistance 500 to 1000 milli-ohm, Continous Drain Current 3.9 A, Pulsed Drain Current 6.4 A. Tags: Surface Mount. More details for IGI60L5050A1M can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGI60L5050A1M
  • Manufacturer
    Infineon Technologies
  • Description
    600 V, 500 to 1000 milli-ohm GaN Transistor

General

  • Configuration
    Half Bridge
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.7 to 1.6 V
  • Drain Source Voltage
    600 V
  • Drain Source Resistance
    500 to 1000 milli-ohm
  • Continous Drain Current
    3.9 A
  • Pulsed Drain Current
    6.4 A
  • Total Charge
    0.58 nC
  • Input Capacitance
    37.8 pF
  • Output Capacitance
    7.2 pF
  • Turn-on Delay Time
    110 ns
  • Turn-off Delay Time
    110 ns
  • Rise Time
    170 ns
  • Fall Time
    90 ns
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TIQFN-28
  • Applications
    Low power motor drives, Low power SMPS

Technical Documents