GaN Power Transistor by Infineon Technologies (22 more products)

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IGLR60R260D1 Image

The IGLR60R260D1 from Infineon Technologies is an Enhancement Mode GaN Power Transistor. This transistor has a drain-source voltage of up to 600 V, a gate threshold voltage of less than 1.6 V, and a drain-source on-resistance of 370 milli-ohms. It has a continuous drain current of up to 10.4 A and a pulsed drain current of less than 15.9 A. This normally-off GaN transistor has a low gate charge and output charge in addition to zero reverse-recovery charge. It offers superior commutation ruggedness, reduced electromagnetic interference (EMI), improved system and power efficiency, and enables higher operating frequency. This JEDEC-qualified power transistor exhibits ultra-fast switching and is capable of reverse conduction. It is available in a surface-mount package that measures 6 x 5 x 1.1 mm and is ideal for industrial and consumer SMPS (based on the half-bridge topology) applications. 


Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Infineon Technologies
  • Description
    600 V Enhancement Mode GaN Power Transistor for SMPS Applications


  • Configuration
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.6 V
  • Drain Source Voltage
    600 V
  • Drain Source Resistance
    370 milli-ohm
  • Continous Drain Current
    10.4 A
  • Pulsed Drain Current
    15.9 A
  • Total Charge
    1.5 nC
  • Input Capacitance
    110 pF
  • Output Capacitance
    20 pF
  • Turn-on Delay Time
    12 ns
  • Turn-off Delay Time
    14 ns
  • Rise Time
    7 ns
  • Fall Time
    30 ns
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Industrial and Consumer SMPS (based on the half-bridge topology) applications
  • Dimensions
    6 x 5 x 1.1 mm

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