IGT60R042D1

GaN Power Transistor by Infineon Technologies (22 more products)

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The IGT60R042D1 from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 1.6 V, Drain Source Voltage 600 V, Drain Source Resistance 33 to 64 milli-ohm, Continous Drain Current 23 A, Pulsed Drain Current 90 A. Tags: Surface Mount. More details for IGT60R042D1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGT60R042D1
  • Manufacturer
    Infineon Technologies
  • Description
    600 V, 33 to 64 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.7 to 1.6 V
  • Drain Source Voltage
    600 V
  • Drain Source Resistance
    33 to 64 milli-ohm
  • Continous Drain Current
    23 A
  • Pulsed Drain Current
    90 A
  • Total Charge
    8.8 nC
  • Input Capacitance
    649 pF
  • Output Capacitance
    97 pF
  • Turn-on Delay Time
    13 ns
  • Turn-off Delay Time
    19 ns
  • Rise Time
    8 ns
  • Fall Time
    11 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-HSOF-8
  • Applications
    Telecom, Datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC)

Technical Documents