The IGT60R070D1 from Infineon Technologies is an Enhancement Mode GaN Power Transistor that is ideal for industrial, data center, and SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high-frequency LLC), adapter, wireless charging, and telecom applications. It has a drain-source voltage of up to 600 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of less than 70 milli-ohms. This GaN transistor has a continuous drain current of up to 31 A and a pulsed drain current of less than 60 A. This JEDEC-qualified transistor works as a normally-off switch and offers ultra-fast switching operation, low gate charge, low output charge, and no reverse-recovery charge. It is capable of reverse conduction and offers superior commutation ruggedness resulting in reduced electromagnetic interference (EMI) and system costs. This RoHS-compliant GaN transistor is available in a surface-mount package that measures 11.67 x 9.9 x 2.3 mm.