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GaN Power Transistor by Infineon Technologies (6 more products)

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The IGT60R190D1S from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 1.6 V, Drain Source Voltage 600 V, Drain Source Resistance 190 milli-ohm, Continous Drain Current 5.5 to 12.5 A, Pulsed Drain Current 13.5 to 23 A. Tags: Surface Mount. More details for IGT60R190D1S can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Infineon Technologies
  • Description
    Gallium nitride CoolGaN™ 600V enhancement mode power transistor IGT60R190D1S for ultimate efficiency and reliability


  • Configuration
  • Gate Threshold Voltage
    0.7 to 1.6 V
  • Drain Source Voltage
    600 V
  • Drain Source Resistance
    190 milli-ohm
  • Continous Drain Current
    5.5 to 12.5 A
  • Pulsed Drain Current
    13.5 to 23 A
  • Total Charge
    3.2 nC
  • Input Capacitance
    157 pF
  • Output Capacitance
    28 pF
  • Turn-on Delay Time
    11 ns
  • Turn-off Delay Time
    12 ns
  • Rise Time
    5 ns
  • Fall Time
    12 ns
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Consumer SMPS and high density chargers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC and flyback).

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