GaN Power Transistor by Innoscience (23 more products)

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INN040W048A Image

The INN040W048A from Innoscience is an Enhancement Mode GaN-on-Si High Electron Mobility Transistor (HEMT) that is ideal for over-voltage protection in the USB port of smartphones, switch circuit in multiple power supply systems, and high-side load switch applications. It is based on GaN-on-Si HEMT technology that blocks signals from both directions and has an ultra-low on-resistance. This transistor has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of up to 2.4 V, and a drain-source on-resistance of less than 4.8 mΩ. It has a continuous drain current of up to 20 A and a pulsed drain current of less than 100 A. This transistor is available in a wafer-level package that measures 2.1 x 2.1 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    40 V GaN-on-Si HEMT for Over-Voltage Protection Applications


  • Configuration
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    2.4 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    4.8 milli-ohm
  • Continous Drain Current
    20 A
  • Pulsed Drain Current
    100 A
  • Total Charge
    15.8 nC
  • Input Capacitance
    886.5 pF
  • Output Capacitance
    381.2 pF
  • Temperature operating range
    -40 to 125 degree C
  • Package Type
    Surface Mount
  • Package
  • Applications
    High side load switch, OVP protection in smart phone USB port, Switch circuits in multiple power suppliers system
  • Dimensions
    2.1 x 2.1 mm

Technical Documents