GaN Power Transistor by Innoscience (68 more products)

Note : Your request will be directed to Innoscience.

INN040W120A Image

The INN040W120A from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for high-side load switches, over-voltage protection (OVP) in smartphone USB ports, and switch circuits in multiple power supplier systems applications. This transistor has a drain-source voltage of up to 40 V, a gate threshold voltage of less than 2.4 V, and a drain-source on-resistance of 9 milli-ohms. It has a continuous drain current of up to 10 A and a pulsed drain current of less than 50 A. This normally-off transistor is based on GaN-on-Silicon E-mode HEMT technology with bi-directional blocking capability to block positive or negative OFF-state voltage. It has an ultra-low on resistance which lowers power consumption for better power and thermal management. It is available in a wafer-level package that measures 1.2 x 1.7 mm.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    40 V Enhancement Mode GaN-on-Silicon Transistor for Smartphone Applications


  • Configuration
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    2.4 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    9 milli-ohm
  • Continous Drain Current
    10 A
  • Pulsed Drain Current
    50 A
  • Total Charge
    7.2 nC
  • Input Capacitance
    405 pF
  • Output Capacitance
    174 pF
  • Temperature operating range
    -40 to 125 Degree C
  • RoHS Compliant
  • Package Type
  • Package
  • Applications
    High side load switch, OVP protection in smart phone USB port, Switch circuits in multiple power suppliers system
  • Dimensions
    1.2 x 1.7 mm

Technical Documents