The INN100EQ016A from Innoscience is an Enhancement-mode GaN-on-Silicon Power Transistor that is ideal for high-frequency DC-DC converters, point of load, RF envelope tracking, PC charger, mobile power bank, and motor driver applications. This transistor has a drain-source voltage of up to 100 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of less than 1.8 milli-ohms. It has a continuous drain current of up to 100 A and a pulsed drain current of less than 320 A. This normally-off transistor is based on GaN-on-Silicon E-mode HEMT technology, which provides very low gate charge and on-state drain-source resistance to improve power density and switching efficiencies while reducing manufacturing costs. It is available in a surface-mount package that measures 4 x 6 mm.