INN100FQ016A

GaN Power Transistor by Innoscience (68 more products)

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The INN100FQ016A from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 1.4 to 1.8 milli-ohm, Continous Drain Current 100 A, Pulsed Drain Current 320 A. Tags: Surface Mount. More details for INN100FQ016A can be seen below.

Product Specifications

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Product Details

  • Part Number
    INN100FQ016A
  • Manufacturer
    Innoscience
  • Description
    100 V, 1.4 to 1.8 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    1.4 to 1.8 milli-ohm
  • Continous Drain Current
    100 A
  • Pulsed Drain Current
    320 A
  • Total Charge
    22 nC
  • Input Capacitance
    2500 pF
  • Output Capacitance
    1100 pF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    FCQFN
  • Applications
    High frequency DC-DC converter, Point of Load, RF envelope tracking, PC charger, Mobile power bank, Motor driver
  • Dimensions
    4 x 6 mm

Technical Documents