INN100W070A

GaN Power Transistor by Innoscience (68 more products)

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The INN100W070A from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for synchronous rectification,class-D audio, high frequency DC-DC converter, communication base station and motor driver applications. This GaN transistor has a drain-source voltage of over 100 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of 5.5 milli-ohms. It has a continuous drain current of up to 29 A and a pulsed drain current of less than 125 A. This GaN-on-Si transistor has very low gate charge and low on-resistance. It ensures zero reverse recovery charge along with fast rise and fall times, making it ideal for high-speed switching applications. This transistor is available in a surface-mount package that measures 2.5 x 1.5 mm.

Product Specifications

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Product Details

  • Part Number
    INN100W070A
  • Manufacturer
    Innoscience
  • Description
    100 V Enhancement Mode GaN-on-Silicon Power Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.1 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    5.5 milli-ohm
  • Continous Drain Current
    29 A
  • Pulsed Drain Current
    125 A
  • Total Charge
    4.5 nC
  • Input Capacitance
    485 pF
  • Output Capacitance
    220 pF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WLCSP
  • Applications
    Synchronous rectification, Class-D audio, High frequency DC-DC converter, Communication base station, Motor driver
  • Dimensions
    2.5 x 1.5 mm

Technical Documents