INN100W135A-Q

GaN Power Transistor by Innoscience (68 more products)

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The INN100W135A-Q from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 10 to 13.5 milli-ohm, Continous Drain Current 18 A, Pulsed Drain Current 75 A. Tags: Surface Mount. More details for INN100W135A-Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    INN100W135A-Q
  • Manufacturer
    Innoscience
  • Description
    100 V, 10 to 13.5 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.7 to 2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    10 to 13.5 milli-ohm
  • Continous Drain Current
    18 A
  • Pulsed Drain Current
    75 A
  • Total Charge
    3.2 nC
  • Input Capacitance
    380 pF
  • Output Capacitance
    220 pF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WLCSP
  • Applications
    LiDAR Application, High Power Density DC-DC Converters, Class-D Audio, High Intensity Headlamps
  • Dimensions
    2.13 x 1.63 mm

Technical Documents