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INN650DA600A

GaN Power Transistor by Innoscience (82 more products)
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The INN650DA600A from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 1.2 to 2.5 V, Drain Source Voltage 650 V, Drain Source Resistance 470 to 1020 milli-ohm, Continous Drain Current 3.3 A, Pulsed Drain Current 6 A. Tags: Surface Mount. More details for INN650DA600A can be seen below.

Product Specifications

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Product Details

  • Part Number
    INN650DA600A
  • Manufacturer
    Innoscience
  • Description
    650 V, 470 to 1020 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.2 to 2.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    470 to 1020 milli-ohm
  • Continous Drain Current
    3.3 A
  • Pulsed Drain Current
    6 A
  • Total Charge
    0.7 nC
  • Input Capacitance
    30 pF
  • Output Capacitance
    9 pF
  • Turn-on Delay Time
    0.6 ns
  • Turn-off Delay Time
    10.6 ns
  • Rise Time
    3.8 ns
  • Fall Time
    9.8 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter, LED driver, Fast battery charger, Standard adaptor
  • Dimensions
    5 x 6 mm

Technical Documents
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