INN80LA01

GaN Power Transistor by Innoscience (68 more products)

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The INN80LA01 from Innoscience is an Automotive Qualified Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for LiDAR application, synchronous rectification & class-D audio, envelope tracking power supplies, high frequency DC-DC converter applications. This AEC-Q101-qualified GaN transistor has a drain-source voltage of over 80 V, a gate threshold voltage of 1.15 V, and a drain-source on-resistance of 6 milli-ohms. It has a continuous drain current of up to 13 A and a pulsed drain current of less than 180 A. This GaN-on-Si transistor offers very high switching frequency and exceptionally low on-resistance. It ensures zero reverse recovery charge along with fast rise and fall times, making it ideal for high-performance applications. This transistor is available in a surface-mount package that measures 3.40 x 2.40 mm.

Product Specifications

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Product Details

  • Part Number
    INN80LA01
  • Manufacturer
    Innoscience
  • Description
    Automotive Qualified Enhancement Mode GaN-on-Si Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.15 V
  • Drain Source Voltage
    80 V
  • Drain Source Resistance
    6 milli-ohm
  • Continous Drain Current
    13 A
  • Pulsed Drain Current
    180 A
  • Total Charge
    6.5 to 8 nC
  • Input Capacitance
    1200 pF
  • Output Capacitance
    450 pF
  • Temperature operating range
    -40 to 125 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LGA
  • Applications
    LiDAR Application, Synchronous Rectification & Class-D Audio, Envelope Tracking Power Supplies, High Frequency DC-DC Converter
  • Dimensions
    3.40 x 2.40 mm

Technical Documents