NV6125

GaN Power Transistor by Navitas Semiconductor (6 more products)

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The NV6125 from Navitas Semiconductor is a GaN Power Transistor with Drain Source Voltage 800 V, Drain Source Resistance 175 to 362 milli-ohm, Continous Drain Current 8 A, Pulsed Drain Current 12 to 16 A, Total Charge 16 nC. Tags: Surface Mount. More details for NV6125 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NV6125
  • Manufacturer
    Navitas Semiconductor
  • Description
    800 V, 8 A, Single GaN Transistor

General

  • Configuration
    Single
  • Industry
    Industrial
  • Drain Source Voltage
    800 V
  • Drain Source Resistance
    175 to 362 milli-ohm
  • Continous Drain Current
    8 A
  • Pulsed Drain Current
    12 to 16 A
  • Total Charge
    16 nC
  • Output Capacitance
    18 pF
  • Turn-on Delay Time
    11 ns
  • Turn-off Delay Time
    9 ns
  • Rise Time
    6 ns
  • Fall Time
    3 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    QFN
  • Applications
    Buck, boost, half bridge, full bridge, Mobile fast-chargers, adapters
  • Dimensions
    6 x 8 mm