GAN039-650NTBA

GaN Power Transistor by Nexperia (12 more products)

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The GAN039-650NTBA from Nexperia is a GaN Power Transistor with Gate Threshold Voltage 3.3 to 4.8 V, Drain Source Voltage 650 V, Drain Source Resistance 33 to 39 milli-ohm, Continous Drain Current 42 to 60 A, Total Charge 30 nc. Tags: Surface Mount. More details for GAN039-650NTBA can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAN039-650NTBA
  • Manufacturer
    Nexperia
  • Description
    650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

General

  • Configuration
    Single
  • Gate Threshold Voltage
    3.3 to 4.8 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    33 to 39 milli-ohm
  • Continous Drain Current
    42 to 60 A
  • Total Charge
    30 nc
  • Input Capacitance
    1500 pF
  • Output Capacitance
    147 pF
  • Temperature operating range
    -55 to +175 °C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    CCPAK
  • Applications
    Hard and soft switching converters for industrial and datacom power, Bridgeless totempole PFC, PV and UPS inverters, Servo motor drives
  • Dimensions
    12 x 12 x 2.5 mm

Technical Documents