GaN Power Transistor by Nexperia (12 more products)

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GAN063-650WSA Image

The GAN063-650WSA from Nexperia is a GaN Power Transistor. It has a drain-source voltage of 650 V with a drain-source resistance of 50-60 milliohms and has a gate-source voltage of ±20 V. This GaN transistor has a continuous drain current of up to 34.5 A and power dissipation of up to 143 W. It is a normally-off transistor that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. This transistor offers an ultra-low reverse recovery charge and has a high gate threshold voltage for very good gate bounce immunity. It delivers very low source-drain voltage in reverse conduction mode. This RoHS compliant transistor is available in a single-ended through-hole package that measures 20.45 x 15.6 x 4.95 mm and is ideal for hard and soft switching converters for industrial and datacom power, bridgeless totempole PFC, PV, UPS inverters, and servo motor drives applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    650 V GaN Power Transistor for Industrial and Datacom Power


  • Configuration
  • Gate Threshold Voltage
    2.2 to 4.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    50 to 60 milli-ohm
  • Continous Drain Current
    24.4 to 34.5 A
  • Total Charge
    15 nc
  • Input Capacitance
    1000 pF
  • Output Capacitance
    130 pF
  • Turn-on Delay Time
    57 ns
  • Turn-off Delay Time
    88 ns
  • Rise Time
    10 ns
  • Fall Time
    11 ns
  • Temperature operating range
    -55 to +175 °C
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    Hard and soft switching converters for industrial and datacom power, Bridgeless totempole PFC, PV and UPS inverters, Servo motor drives
  • Dimensions
    20.45 x 15.6 x 4.95 mm

Technical Documents