GAN063-650WSA Image

GAN063-650WSA

GaN Transistor by Nexperia

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The GAN063-650WSA from Nexperia is a GaN Transistor with Gate Threshold Voltage 2.2 to 4.5 V, Drain Source Voltage 650 V, Drain Source Resistance 50 to 60 milli-ohm, Continous Drain Current 24.4 to 34.5 A, Total Charge 15 nc. Tags: Through Hole. More details for GAN063-650WSA can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAN063-650WSA
  • Manufacturer
    Nexperia
  • Description
    650 V GaN Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    2.2 to 4.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    50 to 60 milli-ohm
  • Continous Drain Current
    24.4 to 34.5 A
  • Total Charge
    15 nc
  • Input Capacitance
    1000 pF
  • Output Capacitance
    130 pF
  • Turn-on Delay Time
    57 ns
  • Turn-off Delay Time
    88 ns
  • Rise Time
    10 ns
  • Fall Time
    11 ns
  • Temperature operating range
    -55 to +175 °C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Hard and soft switching converters for industrial and datacom power, Bridgeless totempole PFC, PV and UPS inverters, Servo motor drives
  • Dimensions
    20.45 x 15.6 x 4.95 mm

Technical Documents

Latest GaN Transistors

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