GAN140-650FBE

GaN Power Transistor by Nexperia (12 more products)

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The GAN140-650FBE from Nexperia is a GaN Power Transistor with Gate Threshold Voltage 1.2 to 2.5 V, Drain Source Voltage 650 V, Drain Source Resistance 106 to 230 milli-ohm, Continous Drain Current 17 A, Pulsed Drain Current 32 A. Tags: Surface Mount. More details for GAN140-650FBE can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAN140-650FBE
  • Manufacturer
    Nexperia
  • Description
    650 V, 106 to 230 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.2 to 2.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    106 to 230 milli-ohm
  • Continous Drain Current
    17 A
  • Pulsed Drain Current
    32 A
  • Total Charge
    3.5 nC
  • Input Capacitance
    125 pF
  • Output Capacitance
    41 pF
  • Turn-on Delay Time
    3 ns
  • Turn-off Delay Time
    4 ns
  • Rise Time
    5 ns
  • Fall Time
    4 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5060-5
  • Applications
    High power density and high efficiency power conversion, AC-to-DC converters, totem pole PFC, DC-to-DC converters, Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers, Datacom and telecom (AC-to-DC and DC-to-DC) converters, Motor d
  • Dimensions
    5.6 x 0.9 mm

Technical Documents