GAN190-650FBE

GaN Power Transistor by Nexperia (12 more products)

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The GAN190-650FBE from Nexperia is a GaN Power Transistor with Gate Threshold Voltage 1.2 to 2.5 V, Drain Source Voltage 650 V, Drain Source Resistance 138 to 300 milli-ohm, Continous Drain Current 11.5 A, Pulsed Drain Current 20.5 A. Tags: Surface Mount. More details for GAN190-650FBE can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAN190-650FBE
  • Manufacturer
    Nexperia
  • Description
    650 V, 138 to 300 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.2 to 2.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    138 to 300 milli-ohm
  • Continous Drain Current
    11.5 A
  • Pulsed Drain Current
    20.5 A
  • Total Charge
    2.8 nC
  • Input Capacitance
    96 pF
  • Output Capacitance
    30 pF
  • Turn-on Delay Time
    1.4 ns
  • Turn-off Delay Time
    1.7 ns
  • Rise Time
    4 ns
  • Fall Time
    4 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5060-5
  • Applications
    High power density and high efficiency power conversion, AC-to-DC converters, totem pole PFC, DC-to-DC converters, Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers, Datacom and telecom (AC-to-DC and DC-to-DC) converters, Motor d
  • Dimensions
    5 x 6 x 0.9 mm

Technical Documents