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GAN7R0-150LBE

GaN Power Transistor by Nexperia (14 more products)
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The GAN7R0-150LBE from Nexperia is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 12.1 V, Drain Source Voltage 150 V, Drain Source Resistance 5.6 to 7 milli-ohm, Continous Drain Current 28 A, Pulsed Drain Current 120 A. Tags: Surface Mount. More details for GAN7R0-150LBE can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAN7R0-150LBE
  • Manufacturer
    Nexperia
  • Description
    150 V, 5.6 to 7 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.8 to 12.1 V
  • Drain Source Voltage
    150 V
  • Drain Source Resistance
    5.6 to 7 milli-ohm
  • Continous Drain Current
    28 A
  • Pulsed Drain Current
    120 A
  • Total Charge
    7.6 nC
  • Input Capacitance
    865 pF
  • Output Capacitance
    280 pF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT8073-1
  • Applications
    High power density and high efficiency power conversion, AC-to-DC converters, totem pole PFC, DC-to-DC converters, Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers, Datacom and telecom (AC-to-DC and DC-to-DC) converters, Motor d
  • Dimensions
    3.2 x 2.2 x 0.774 mm

Technical Documents
View details on the manufacturer's website
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