GaN Power Transistor by Renesas (5 more products)

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ISL70024SEHML Image

The ISL73024SEH from Renesas is an Enhancement Mode GaN Power Transistor that is ideal for switching regulation, motor drives, relay drives, inrush protection, and down hole drilling applications. The transistor has a drain-source breakdown voltage of over 200 V and a gate threshold voltage of 1.4 V, and a drain-source on-resistance of 45 milli-ohms. It has a continuous drain current of up to 7.5 A. This transistor provides the ability to significantly reduce gate drive power and lower the cost. It is manufactured for destructive single event effects (SEE) and has been tested for total ionizing dose (TID) radiation. This MIL-PRF-38535-rated GaN transistor has exceptionally high electron mobility and low temperature coefficient, thereby resulting in very low on-state drain source resistance value, while its lateral device structure and majority carrier diode provide exceptionally low gate charge and near zero reverse recovery charge, making it reliable for higher switching frequency and efficiency applications. It is available in a surface-mount package that measures 9 x 4.7 x 1.82 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    200 V Enhancement Mode GaN Power Transistor


  • Configuration
  • Industry
  • Gate Threshold Voltage
    1.4 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    45 milli-ohm
  • Continous Drain Current
    7.5 A
  • Total Charge
    2.5 to 5 nC
  • Input Capacitance
    270 pF
  • Output Capacitance
    150 to 200 pF
  • Temperature operating range
    -55 to 125 Degree C
  • Qualification
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Applications
    Switching regulation, Motor drives, Relay drives, Inrush protection, Down hole drilling, High reliability industrial
  • Dimensions
    9 x 4.7 x 1.82 mm

Technical Documents