GaN Power Transistor by Renesas (5 more products)

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The SL70024SEH from Renesas is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 200 V, Drain Source Resistance 45 to 110 milli-ohm, Continous Drain Current 7.5 A, Total Charge 2.5 to 5 nC. Tags: Surface Mount. More details for SL70024SEH can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    200V, 7.5A Enhancement Mode GaN Power Transistor


  • Configuration
  • Industry
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    45 to 110 milli-ohm
  • Continous Drain Current
    7.5 A
  • Total Charge
    2.5 to 5 nC
  • Input Capacitance
    270 pF
  • Output Capacitance
    150 to 200 pF
  • Temperature operating range
    -55 to 125 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Applications
    Switching regulation, Motor drives, Relay drives, Inrush protection, Down hole drilling, High reliability industrial
  • Dimensions
    2766µm x 950µm (108.90 mils x 37.40 mils) Thickness: 685µm (26.97 mils)

Technical Documents

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