GNE1007TB

GaN Power Transistor by ROHM Semiconductor (4 more products)

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GNE1007TB Image

The GNE1007TB from ROHM Semiconductor is a GaN Power Transistor with Gate Threshold Voltage 8 V, Drain Source Voltage 150 V, Drain Source Resistance 7 milli-ohm, Continous Drain Current 80 A, Total Charge 10.2 nC. Tags: Surface Mount. More details for GNE1007TB can be seen below.

Product Specifications

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Product Details

  • Part Number
    GNE1007TB
  • Manufacturer
    ROHM Semiconductor
  • Description
    150 V, 80 A, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Industrial, Commercial
  • Gate Threshold Voltage
    8 V
  • Drain Source Voltage
    150 V
  • Drain Source Resistance
    7 milli-ohm
  • Continous Drain Current
    80 A
  • Total Charge
    10.2 nC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Dimensions
    5.0 x 6.0 x 1.0 mm