TP44110HBTRPBF

GaN Power Transistor by Tagore Technology (7 more products)

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The TP44110HBTRPBF from Tagore Technology is a GaN Power Transistor with Gate Threshold Voltage 1.7 to 2.5 V, Drain Source Voltage 650 V, Drain Source Resistance 90 to 220 milli-ohm, Continous Drain Current 12 to 19 A, Pulsed Drain Current 30 A. Tags: Surface Mount. More details for TP44110HBTRPBF can be seen below.

Product Specifications

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Product Details

  • Part Number
    TP44110HBTRPBF
  • Manufacturer
    Tagore Technology
  • Description
    650 V, 90 to 220 milli-ohm GaN Transistor

General

  • Configuration
    Dual
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.7 to 2.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    90 to 220 milli-ohm
  • Continous Drain Current
    12 to 19 A
  • Pulsed Drain Current
    30 A
  • Total Charge
    3 nC
  • Input Capacitance
    110 pF
  • Output Capacitance
    35 pF
  • Turn-on Delay Time
    8 ns
  • Turn-off Delay Time
    15 ns
  • Rise Time
    9 ns
  • Fall Time
    4 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    QFN
  • Applications
    Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-directional PFCs, Half- and full-bridge LLC converters, High-frequency electronic transformers, Mobile chargers and laptop adapters, EV chargers and power tools, LED and motor drives, Server power supplies
  • Dimensions
    8 x 10 x 0.8 mm

Technical Documents