TP44400SGTRPBF

GaN Power Transistor by Tagore Technology (7 more products)

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The TP44400SGTRPBF from Tagore Technology is a GaN Power Transistor with Gate Threshold Voltage 1.7 to 2.5 V, Drain Source Voltage 650 V, Drain Source Resistance 360 to 880 milli-ohm, Continous Drain Current 4 to 6.5 A, Pulsed Drain Current 7.5 A. Tags: Surface Mount. More details for TP44400SGTRPBF can be seen below.

Product Specifications

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Product Details

  • Part Number
    TP44400SGTRPBF
  • Manufacturer
    Tagore Technology
  • Description
    650 V, 360 to 880 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.7 to 2.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    360 to 880 milli-ohm
  • Continous Drain Current
    4 to 6.5 A
  • Pulsed Drain Current
    7.5 A
  • Total Charge
    0.75 nC
  • Input Capacitance
    28 pF
  • Output Capacitance
    9 pF
  • Turn-on Delay Time
    10 ns
  • Turn-off Delay Time
    10 ns
  • Rise Time
    14 ns
  • Fall Time
    4 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    QFN
  • Applications
    Ac-dc, dc-dc, dc-ac converters, PFC and inverter applications, ACF and AHB based power supplies, High frequency LLC resonant converters, Mobile chargers and laptop adapters, Half- and full-bridge dc-dc converters, LED and motor drives
  • Dimensions
    5.7 x 0.8 mm

Technical Documents