GaN Power Transistor by Transphorm (13 more products)

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TP65H015G5WS Image

The TP65H015G5WS from Transphorm is an Enhancement Mode SuperGaN FET Power Transistor. This transistor has a gate threshold voltage of up to 20 V, a drain-source voltage of over 650 V, and a drain-source on-resistance of less than 18 mΩ. It has a continuous drain current of up to 95 A and power dissipation of less than 266 W. This GaN transistor combines state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. It utilizes Transphorm’s Gen V platform with advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon. This RoHS-compliant transistor is available in a through-hole package that measures 15.72 x 40.22 mm and is ideal for datacom, PV inverter, servo motor, and industrial applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    650 V GaN Power Transistor for Industrial Applications


  • Configuration
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    20 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    18 milli-ohm
  • Continous Drain Current
    95 A
  • Pulsed Drain Current
    600 A
  • Total Charge
    68 to 100 nc
  • Input Capacitance
    4670 pF
  • Output Capacitance
    312 pF
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    Datacom, Broad industrial, PV inverter, Servo motor
  • Dimensions
    15.72 x 40.22 mm

Technical Documents