The TP65H035G4QS-TR from Transphorm is an Enhancement Mode GaN Power Transistor. The transistor has a drain-source breakdown voltage of 650 V and a gate threshold voltage of 4 V. It has a continuous drain current of 46.5 A and a drain-source resistance of 35 milli-ohms. This transistor is a normally-off device using Transphorm’s Gen IV SuperGaN platform that combines advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. It combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance. This JEDEC-qualified power transistor has an effective dynamic drain-source resistance production tested and has a robust design defined by a wide gate safety margin, transient over-voltage capability, and enhanced inrush current capability. It enables AC-DC bridgeless totem-pole PFC designs due to increased power density, reduced system size and weight with overall lower system cost thereby achieving increased efficiency in both hard- and soft-switched circuits.
This RoHS-compliant power transistor is easy to drive with commonly used gate drivers with a GSD pin layout to improve high-speed design. It is available in a surface-mount package that measures 12 x 10 mm and is ideal for datacom, broad industrial, PV inverter, and servo motor applications.