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TP65H035G4WS

GaN Transistor by Transphorm

Note : Your request will be directed to Transphorm.

The TP65H035G4WS from Transphorm is a GaN Transistor with Gate Threshold Voltage 3.3 to 4.8 V, Drain Source Voltage 650 V, Drain Source Resistance 35 to 72 milli-ohm, Continous Drain Current 29.5 to 46.5 A, Pulsed Drain Current 240 A. Tags: Through Hole. More details for TP65H035G4WS can be seen below.

Product Specifications

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Product Details

  • Part Number
    TP65H035G4WS
  • Manufacturer
    Transphorm
  • Description
    650 V GaN Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    3.3 to 4.8 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    35 to 72 milli-ohm
  • Continous Drain Current
    29.5 to 46.5 A
  • Pulsed Drain Current
    240 A
  • Total Charge
    22 nc
  • Input Capacitance
    1500 pF
  • Output Capacitance
    147 pF
  • Turn-on Delay Time
    60 ns
  • Turn-off Delay Time
    94 ns
  • Rise Time
    10 ns
  • Fall Time
    10 ns
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Datacom, Broad industrial, PV inverter, Servo motor

Technical Documents

Latest GaN Transistors

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