GaN Power Transistor by Transphorm (13 more products)

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TP65H035G4WS Image

The TP65H035G4WS from Transphorm is a GaN Power Field Effect Transistor. It has a drain-source voltage of 650 V and a drain-source resistance of 35-72 mΩ. It has a gate threshold voltage of 3.3-4.8 V and gate to source voltage of ±20 V. This JEDEC qualified GaN transistor has a continuous drain current of 29.5-46.5 A and a pulsed drain current of 240 A. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. 

The TP65H035G4WS is based on Transphorm’s Gen IV SuperGaN platform that uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. This RoHS-compliant transistor achieves increased efficiency in both hard and soft switched circuits and can be used to drive gate drivers. It is available in a through-hole package and is ideal for datacom, PV inverter, servo motor, and broad industrial applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    650 V GaN Power Transistor for Datacom & Industrial Applications


  • Configuration
  • Gate Threshold Voltage
    3.3 to 4.8 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    35 to 72 milli-ohm
  • Continous Drain Current
    29.5 to 46.5 A
  • Pulsed Drain Current
    240 A
  • Total Charge
    22 nc
  • Input Capacitance
    1500 pF
  • Output Capacitance
    147 pF
  • Turn-on Delay Time
    60 ns
  • Turn-off Delay Time
    94 ns
  • Rise Time
    10 ns
  • Fall Time
    10 ns
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    Datacom, Broad industrial, PV inverter, Servo motor

Technical Documents