TP65H035WS

GaN Power Transistor by Transphorm (14 more products)

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TP65H035WS Image

The TP65H035WS from Transphorm is an Enhancement Mode Cascode GaN Field Effect Transistor (FET). This transistor has a drain-source voltage of over 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of 35 mΩ. It has a continuous drain current of up to 46.5 A and a pulsed drain current of less than 240 A. This GaN transistor combines state-of-the-art high-voltage GaN HEMT with low-voltage Silicon MOSFET resulting in superior reliability and performance. It offers improved efficiency over Silicon due to inherent lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H035WS ensures improved power density, reduced system size and weight, and overall lower system cost, enabling AC-DC bridgeless totem-pole power factor correction (PFC) designs. This RoHS-compliant transistor is available in a through-hole package that measures 15.90 x 40.79 mm and is ideal for datacom, broad industrial, PV inverter, and servo motor applications.

Product Specifications

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Product Details

  • Part Number
    TP65H035WS
  • Manufacturer
    Transphorm
  • Description
    650 V Enhancement Mode Cascode GaN FET for Servo Motor Applications

General

  • Configuration
    Single
  • Gate Threshold Voltage
    4 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    35 milli-ohm
  • Continous Drain Current
    46.5 A
  • Pulsed Drain Current
    240 A
  • Total Charge
    24 to 36 nc
  • Input Capacitance
    1500 pF
  • Output Capacitance
    190 pF
  • Turn-on Delay Time
    69 ns
  • Turn-off Delay Time
    98.5 ns
  • Rise Time
    13.5 ns
  • Fall Time
    11.5 ns
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Datacom, Broad industrial, PV inverter, Servo motor
  • Dimensions
    15.90 x 40.79 mm

Technical Documents