The TP65H035WS from Transphorm is an Enhancement Mode Cascode GaN Field Effect Transistor (FET). This transistor has a drain-source voltage of over 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of 35 mΩ. It has a continuous drain current of up to 46.5 A and a pulsed drain current of less than 240 A. This GaN transistor combines state-of-the-art high-voltage GaN HEMT with low-voltage Silicon MOSFET resulting in superior reliability and performance. It offers improved efficiency over Silicon due to inherent lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H035WS ensures improved power density, reduced system size and weight, and overall lower system cost, enabling AC-DC bridgeless totem-pole power factor correction (PFC) designs. This RoHS-compliant transistor is available in a through-hole package that measures 15.90 x 40.79 mm and is ideal for datacom, broad industrial, PV inverter, and servo motor applications.