TP65H035WSQA

GaN Power Transistor by Transphorm (13 more products)

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The TP65H035WSQA from Transphorm is an Automotive Qualified GaN Field Effect Transistor that is ideal for automotive, datacom, PV inverter, and broad industrial applications. It has a drain-source voltage of over 650 V, a gate threshold voltage of 4 V, and drain-source on-resistance of less than 41 mΩ. This power transistor has a continuous drain current of up to 47.2 A and a pulsed drain current of less than 240 A. It is a normally-off device that combines state-of-the-art high voltage GaN HEMT and low-voltage silicon MOSFET technologies, thereby offering superior reliability and performance. 

This AEC-Q101 qualified transistor offers intrinsic lifetime tests, wide gate safety margin, and transient over-voltage capability, which results in a robust design. It is designed to provide an increased power density, reduced system size, and weight, and an overall lower system cost to enable AC-DC bridgeless totem-pole PFC designs. This RoHS-compliant transistor is available in a through-hole package that measures 15.72 x 40.22 mm.

Product Specifications

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Product Details

  • Part Number
    TP65H035WSQA
  • Manufacturer
    Transphorm
  • Description
    AEC-Q101 Qualified GaN FET Transistor for Industrial Applications

General

  • Configuration
    Single
  • Gate Threshold Voltage
    3.4 to 4.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    35 to 84 milli-ohm
  • Continous Drain Current
    33.4 to 47.2 A
  • Pulsed Drain Current
    240 A
  • Total Charge
    24 nc
  • Input Capacitance
    1500 pF
  • Output Capacitance
    196 pF
  • Turn-on Delay Time
    69 ns
  • Turn-off Delay Time
    98 ns
  • Rise Time
    14 ns
  • Fall Time
    12 ns
  • Temperature operating range
    -55 to +175 °C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Automotive, Datacom, Broad industrial, PV inverter

Technical Documents

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