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TP65H035WSQA

GaN Power Transistor by Transphorm (12 more products)

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The TP65H035WSQA from Transphorm is a GaN Power Transistor with Gate Threshold Voltage 3.4 to 4.5 V, Drain Source Voltage 650 V, Drain Source Resistance 35 to 84 milli-ohm, Continous Drain Current 33.4 to 47.2 A, Pulsed Drain Current 240 A. Tags: Through Hole. More details for TP65H035WSQA can be seen below.

Product Specifications

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Product Details

  • Part Number
    TP65H035WSQA
  • Manufacturer
    Transphorm
  • Description
    650V 35mΩ AEC-Q101 Qualified GaN FET in TO-247

General

  • Configuration
    Single
  • Gate Threshold Voltage
    3.4 to 4.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    35 to 84 milli-ohm
  • Continous Drain Current
    33.4 to 47.2 A
  • Pulsed Drain Current
    240 A
  • Total Charge
    24 nc
  • Input Capacitance
    1500 pF
  • Output Capacitance
    196 pF
  • Turn-on Delay Time
    69 ns
  • Turn-off Delay Time
    98 ns
  • Rise Time
    14 ns
  • Fall Time
    12 ns
  • Temperature operating range
    -55 to +175 °C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Automotive, Datacom, Broad industrial, PV inverter

Technical Documents

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