GaN Power Transistor by Transphorm (32 more products)

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TP65H050G4BS Image

The TP65H050G4BS from Transphorm is an Enhancement Mode SuperGaN FET Power Transistor. It has a gate threshold voltage of 4 V, drain-source voltage of over 650 V, and a drain-source on-resistance of 50 mΩ. This transistor has a continuous drain current of up to 34 A and a pulsed drain current of less than 150 A. It is based on Transphorm’s Gen IV platform and is a normally-off device. This power transistor combines state-of-the-art high voltage GaN HEMT with a low voltage Silicon MOSFET that results in superior reliability and performance. The Gen IV platform integrated into this transistor uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over its traditional silicon counterpart. It provides an increased power density, reduced system size and cost, and an overall lower system cost that enables AC-DC bridgeless totem-pole PFC designs. This RoHS-compliant transistor is available in a surface-mount package that measures 10.06 x 14.70 mm and is ideal for servo motors, PV inverters, industrial, and datacom applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    650 V SuperGaN FET Power Transistor for Industrial Applications


  • Configuration
  • Industry
  • Gate Threshold Voltage
    4 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    50 milli-ohm
  • Continous Drain Current
    34 A
  • Pulsed Drain Current
    150 A
  • Total Charge
    16 nC
  • Input Capacitance
    1000 pF
  • Output Capacitance
    110 pF
  • Turn-on Delay Time
    49.2 ns
  • Turn-off Delay Time
    88.3 ns
  • Rise Time
    11.3 ns
  • Fall Time
    10.9 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Datacom, Broad industrial, PV inverter, Servo motor
  • Dimensions
    10.06 x 14.70 mm

Technical Documents