The TP65H050G4BS from Transphorm is an Enhancement Mode SuperGaN FET Power Transistor. It has a gate threshold voltage of 4 V, drain-source voltage of over 650 V, and a drain-source on-resistance of 50 mΩ. This transistor has a continuous drain current of up to 34 A and a pulsed drain current of less than 150 A. It is based on Transphorm’s Gen IV platform and is a normally-off device. This power transistor combines state-of-the-art high voltage GaN HEMT with a low voltage Silicon MOSFET that results in superior reliability and performance. The Gen IV platform integrated into this transistor uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over its traditional silicon counterpart. It provides an increased power density, reduced system size and cost, and an overall lower system cost that enables AC-DC bridgeless totem-pole PFC designs. This RoHS-compliant transistor is available in a surface-mount package that measures 10.06 x 14.70 mm and is ideal for servo motors, PV inverters, industrial, and datacom applications.