The TP65H050WS from Transphorm is an Enhancement Mode Cascode GaN Field Effect Transistor that is ideal for datacom, PV inverter, servo motor, and broad industrial applications. It has a drain-source voltage of over 650 V, a gate threshold voltage of up to 4.8 V, and a drain-source on-resistance of less than 60 milli-ohms. This GaN FET has a continuous drain current of up to 36 A and a pulsed drain current of less than 150 A. It is a normally-off device that combines state-of-the-art high-voltage GaN HEMT with low-voltage Silicon MOSFET, resulting in superior reliability and performance. This GaN transistor offers improved efficiency over Silicon due to inherent lower gate charge, lower crossover loss, and smaller reverse recovery charge.
This JEDEC-qualified GaN FET offers intrinsic lifetime tests, a wide gate safety margin, and transient over-voltage capability, which results in a robust design. It is designed to provide an increased power density, reduced system size, and weight, and an overall lower system cost to enable AC-DC bridgeless totem-pole PFC designs. This RoHS-compliant transistor achieves increased efficiency in both hard and soft-switched circuits and is compatible with commonly-used gate drivers. It is available in a through-hole package that measures 41.23 x 15.90 x 5.00 mm.