GaN Power Transistor by Transphorm (18 more products)

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TP65H050WSQA Image

The TP65H050WSQA from Transphorm is an Automotive Qualified GaN Field Effect Transistor that is ideal for automotive, broad industrial, PV inverter, and datacom applications. It has a drain-source voltage of over 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 60 milli-ohms. This GaN transistor has a continuous drain current of up to 36 A and a pulsed drain current of less than 150 A. It is a normally-off device that combines state-of-the-art high-voltage GaN HEMT and low-voltage Silicon MOSFET technologies, which results in superior reliability and performance. This AEC-Q101-qualified FET offers improved efficiency over Silicon, owing to lower gate charge, lower crossover loss, and smaller reverse recovery charge. It is a dynamic effective drain-source on-resistance production-tested device.

This RoHS-compliant GaN transistor provides increased power density, reduced system size and weight, and overall lower system cost, thereby enabling AC-DC bridgeless totem-pole PFC designs. It is available in a through-hole package that measures 15.72 x 40.22 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    650 V Automotive Qualified GaN Field Effect Transistor


  • Configuration
  • Industry
    Automotive, Industrial
  • Gate Threshold Voltage
    4 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    60 milli-ohm
  • Continous Drain Current
    36 A
  • Pulsed Drain Current
    150 A
  • Total Charge
    15 to 24 nc
  • Input Capacitance
    1000 pF
  • Output Capacitance
    130 pF
  • Turn-on Delay Time
    57 ns
  • Turn-off Delay Time
    88 ns
  • Rise Time
    10 ns
  • Fall Time
    11 ns
  • Temperature operating range
    -55 to +175 °C
  • Qualification
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    Automotive, Datacom, Broad industrial, PV inverter
  • Dimensions
    15.72 x 40.22 mm

Technical Documents