The TP65H050WSQA from Transphorm is an Automotive Qualified GaN Field Effect Transistor that is ideal for automotive, broad industrial, PV inverter, and datacom applications. It has a drain-source voltage of over 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 60 milli-ohms. This GaN transistor has a continuous drain current of up to 36 A and a pulsed drain current of less than 150 A. It is a normally-off device that combines state-of-the-art high-voltage GaN HEMT and low-voltage Silicon MOSFET technologies, which results in superior reliability and performance. This AEC-Q101-qualified FET offers improved efficiency over Silicon, owing to lower gate charge, lower crossover loss, and smaller reverse recovery charge. It is a dynamic effective drain-source on-resistance production-tested device.
This RoHS-compliant GaN transistor provides increased power density, reduced system size and weight, and overall lower system cost, thereby enabling AC-DC bridgeless totem-pole PFC designs. It is available in a through-hole package that measures 15.72 x 40.22 mm.