GaN Power Transistor by Transphorm (18 more products)

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TP65H070G4RS-TR Image

The TP65H070G4RS-TR from Transphorm is a GaN Field Effect Transistor that is ideal for datacom, broad industrial, PV inverter, servo motor, and computing applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 85 milli-ohms. This FET has a continuous drain current of up to 29 A and a pulsed drain current of less than 120 A. It uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over Silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. This transistor combines state-of-the-art high-voltage GaN HEMT and low-voltage Silicon MOSFET technologies for superior reliability and performance. It offers an increased power density, reduced system size and weight, and an overall lower system cost, resulting in improved efficiency in both hard and soft-switched circuits. This RoHS-compliant GaN transistor is available in a surface-mount package that measures 9.26 x 10 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    650 V GaN Field Effect Transistor for Datacom Applications


  • Industry
    Automotive, Commercial, Industrial
  • Gate Threshold Voltage
    4 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    85 milli-ohm
  • Continous Drain Current
    29 A
  • Pulsed Drain Current
    120 A
  • Total Charge
    9 nC
  • Input Capacitance
    638 pF
  • Output Capacitance
    72 pF
  • Turn-on Delay Time
    43.4 ns
  • Turn-off Delay Time
    56 ns
  • Rise Time
    6.2 ns
  • Fall Time
    7.2 ns
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Datacom, Broad industrial, PV inverter, Servo motor, Computing
  • Dimensions
    9.26 x 10 mm

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