TP65H480G4JSG

GaN Power Transistor by Transphorm (18 more products)

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The TP65H480G4JSG from Transphorm is a GaN Field Effect Transistor that is ideal for consumers, power adapters, and low-power SMPS and lighting applications. It has a drain-source voltage of over 650 V, a gate threshold voltage of 2.1 V, and a drain-source on-resistance of 480 milli-ohms. This power transistor has a continuous drain current of up to 3.6 A and a pulsed drain current of less than 17 A. It uses high-voltage GaN HEMT technology with a low-voltage Silicon MOSFET for top-tier reliability and performance. This RoHS-compliant transistor simplifies the manufacturing process with advanced epitaxial and patented design techniques, enhancing efficiency by reducing gate charge, output capacitance, crossover loss, and reverse recovery charge compared to Silicon counterparts. It is available in a surface-mount package that measures 6.0 x 5.0 x 1.0 mm.

Product Specifications

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Product Details

  • Part Number
    TP65H480G4JSG
  • Manufacturer
    Transphorm
  • Description
    650 V GaN FET for SMPS Applications

General

  • Configuration
    Single
  • Gate Threshold Voltage
    1.6 to 2.8 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    480 to 1000 milli-ohm
  • Continous Drain Current
    2.3 to 3.6 A
  • Pulsed Drain Current
    17 A
  • Total Charge
    9 nc
  • Input Capacitance
    760 pF
  • Output Capacitance
    9 pF
  • Turn-on Delay Time
    16.6 ns
  • Turn-off Delay Time
    53.2 ns
  • Rise Time
    3.5 ns
  • Fall Time
    7.6 ns
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN
  • Applications
    Consumer, Power adapters, Low power SMPS, Lighting
  • Dimensions
    5 x 6 mm

Technical Documents