The TP65H480G4JSGB from Transphorm is a GaN Field Effect Transistor that combines state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance. It has a drain-source voltage of over 650 V, a gate threshold voltage of 2.4 V, and a drain-source on-resistance of 480 milli-ohms. This transistor has a continuous drain current of up to 3.6 A and a pulsed drain current of less than 16 A. It is based on Gen IV technology and functions as a normally-off device. This transistor uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. It has reduced system size and cost and overall lower system cost that contribute to improved efficiency in both hard and soft switched circuits. This JEDEC-qualified transistor is available in a surface-mount package that measures 5 x 6 mm and is ideal for consumer, power adapters, low power SMPS, and lighting applications.